MT28EW512ABA1HJS-0SIT
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manufacturer:
Micron Technology Inc.
Description:
IC FLASH 512MBIT PARALLEL 56TSOP
Category:
Semiconductor IC
Specifications
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
60ns
Supplier Device Package:
56-TSOP
Memory Type:
Non-Volatile
Mfr:
Micron Technology Inc.
Memory Size:
512Mbit
Voltage - Supply:
2.7V ~ 3.6V
Access Time:
95 Ns
Package / Case:
56-TFSOP (0.724", 18.40mm Width)
Memory Organization:
64M X 8, 32M X 16
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
FLASH - NOR
Base Product Number:
MT28EW512
Memory Format:
FLASH
Introduction
FLASH - NOR Memory IC 512Mbit Parallel 95 ns 56-TSOP
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MT40A4G8NEA-062E:F |
IC DRAM 32GBIT PARALLEL 78FBGA
|
|
|
|
MT41K256M16TW-107 IT:P |
IC DRAM 4GBIT PAR 96FBGA
|
|
|
|
MT40A512M16LY-062E IT:E |
IC DRAM 8GBIT PARALLEL 96FBGA
|
|
|
|
MT53E256M32D2DS-053 AIT:B |
IC DRAM 8GBIT 1.866GHZ 200WFBGA
|
|
|
|
MT29F4G01ABBFDWB-IT:F |
IC FLASH 4GBIT SPI 83MHZ 8UPDFN
|
|
|
|
MT25QL128ABA1EW9-0SIT |
IC FLASH 128MBIT SPI 8WPDFN
|
|
|
|
MT25QL01GBBB8ESF-0SIT |
IC FLASH 1GBIT SPI 133MHZ 16SO
|
|
|
|
MT25QU128ABA8E12-0AAT |
IC FLASH 128MBIT SPI 24TPBGA
|
|
|
|
MT41K64M16TW-107:J |
IC DRAM 1GBIT PAR 96FBGA
|
|
|
|
MT25QL128ABA1ESE-0SIT |
IC FLASH 128MBIT SPI 133MHZ 8SO
|
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