SIHB24N80AE-GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 800V 21A D2PAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
89 NC @ 10 V
Supplier Device Package:
D²PAK (TO-263)
Rds On (Max) @ Id, Vgs:
184mOhm @ 10A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1836 PF @ 100 V
Drain To Source Voltage (Vdss):
800 V
Power Dissipation (Max):
208W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB24
Introduction
N-Channel 800 V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
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| Image | Part # | Description | |
|---|---|---|---|
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MOSFET P-CH 40V 60A PPAK SO-8
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SQJ486EP-T1_GE3 |
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SQM120P06-07L_GE3 |
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SQM100P10-19L_GE3 |
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SQJA36EP-T1_GE3 |
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|
SQJ459EP-T1_GE3 |
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SI7463ADP-T1-GE3 |
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|
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