BYG22B-E3/TR
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
DIODE AVALANCHE 100V 2A DO214AC
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 100 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 2 A
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
DO-214AC (SMA)
Reverse Recovery Time (trr):
25 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Avalanche
Operating Temperature - Junction:
-55°C ~ 150°C
Package / Case:
DO-214AC, SMA
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
BYG22
Highlight:
BYG22B-E3/TR semiconductor diode
,BYG22B-E3/TR rectifier IC
,BYG22B-E3/TR electronic component
Introduction
Diode 100 V 2A Surface Mount DO-214AC (SMA)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
VS-HFA16PB120-N3 |
DIODE GP 1.2KV 16A TO247AC
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|
|
VS-10MQ100NTRPBF |
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|
|
|
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DIODE ARRAY SCHOTTKY 45V TO247AC
|
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|
MURS120HE3_A/H |
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MURS340-M3/9AT |
DIODE GEN PURP 400V 3A DO214AB
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|
|
RS1KHE3_A/H |
DIODE GEN PURP 800V 1A DO214AC
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VS-20MQ100-M3/5AT |
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BAS20-HE3-18 |
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|
MURS260-E3/52T |
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|
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|
VS-E5PH3006L-N3 |
DIODE GEN PURP 600V 30A TO247AD
|
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