VS-8EWH06FN-M3
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
DIODE GEN PURP 600V 8A DPAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
2.4 V @ 8 A
Package:
Bulk
Series:
FRED Pt®
Capacitance @ Vr, F:
-
Supplier Device Package:
D-PAK (TO-252AA)
Reverse Recovery Time (trr):
25 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
8EWH06
Highlight:
Semiconductor IC VS-8EWH06FN-M3
,IC chip with warranty
,VS-8EWH06FN-M3 electronic component
Introduction
Diode 600 V 8A Surface Mount D-PAK (TO-252AA)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
VS-HFA16PB120-N3 |
DIODE GP 1.2KV 16A TO247AC
|
|
|
|
VS-10MQ100NTRPBF |
DIODE SCHOTTKY 100V 1A DO214AC
|
|
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|
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|
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|
MURS120HE3_A/H |
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MURS340-M3/9AT |
DIODE GEN PURP 400V 3A DO214AB
|
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|
RS1KHE3_A/H |
DIODE GEN PURP 800V 1A DO214AC
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VS-20MQ100-M3/5AT |
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BAS20-HE3-18 |
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|
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|
MURS260-E3/52T |
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|
|
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|
VS-E5PH3006L-N3 |
DIODE GEN PURP 600V 30A TO247AD
|
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