VS-E5TH0812-M3
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manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
DIODE GEN PURP 1.2KV 8A TO220AC
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
2.5 V @ 8 A
Package:
Tube
Series:
FRED Pt®
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
100 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
E5TH0812
Introduction
Diode 1200 V 8A Through Hole TO-220AC
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| Image | Part # | Description | |
|---|---|---|---|
|
|
VS-HFA16PB120-N3 |
DIODE GP 1.2KV 16A TO247AC
|
|
|
|
VS-10MQ100NTRPBF |
DIODE SCHOTTKY 100V 1A DO214AC
|
|
|
|
STPS40L45CW |
DIODE ARRAY SCHOTTKY 45V TO247AC
|
|
|
|
MURS120HE3_A/H |
DIODE GEN PURP 200V 2A DO214AA
|
|
|
|
MURS340-M3/9AT |
DIODE GEN PURP 400V 3A DO214AB
|
|
|
|
RS1KHE3_A/H |
DIODE GEN PURP 800V 1A DO214AC
|
|
|
|
VS-20MQ100-M3/5AT |
DIODE SCHOTTKY 100V 2A DO214AC
|
|
|
|
BAS20-HE3-18 |
DIODE GP 150V 200MA SOT23-3
|
|
|
|
MURS260-E3/52T |
DIODE GEN PURP 600V 2A DO214AA
|
|
|
|
VS-E5PH3006L-N3 |
DIODE GEN PURP 600V 30A TO247AD
|
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