1N5617E3
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manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 1A A AXIAL
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 NA @ 400 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
800 MV @ 3 A
Package:
Bag
Series:
-
Capacitance @ Vr, F:
35pF @ 12V, 1MHz
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
150 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
A, Axial
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N5617
Introduction
Diode 400 V 1A Through Hole A, Axial
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| Image | Part # | Description | |
|---|---|---|---|
|
|
PIC12F609-I/P |
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