SQ2361AEES-T1_GE3
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manufacturer:
Vishay Semiconductors
Description:
MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified
Category:
Semiconductor IC
Specifications
Transistor Polarity:
P-Channel
Technology:
Si
Id - Continuous Drain Current:
- 2.8 A
Mounting Style:
SMD/SMT
Tradename:
TrenchFET
Minimum Operating Temperature:
- 55 C
Package / Case:
SOT-23-3
Maximum Operating Temperature:
+ 175 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
- 60 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
- 2.5 V
Product Category:
MOSFET
Rds On - Drain-Source Resistance:
0.13 Ohms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
+/- 20 V
Qg - Gate Charge:
15 NC
Manufacturer:
Vishay Semiconductors
Introduction
The SQ2361AEES-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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