SQ2315ES-T1_GE3
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manufacturer:
Siliconix / Vishay
Description:
MOSFET P-Channel 12V AEC-Q101 Qualified
Category:
Semiconductor IC
Specifications
Transistor Polarity:
P-Channel
Technology:
Si
Id - Continuous Drain Current:
- 5 A
Mounting Style:
SMD/SMT
Tradename:
TrenchFET
Minimum Operating Temperature:
- 55 C
Package / Case:
SOT-23-3
Maximum Operating Temperature:
+ 175 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
- 12 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
- 1 V
Product Category:
MOSFET
Rds On - Drain-Source Resistance:
0.042 Ohms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
+/- 8 V
Qg - Gate Charge:
13 NC
Manufacturer:
Siliconix / Vishay
Introduction
The SQ2315ES-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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SQJ479EP-T1_GE3 |
MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified
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|
SIR610DP-T1-RE3 |
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DG412DQ-T1-E3 |
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DG412DY-T1-E3 |
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DG411DY-T1-E3 |
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