FGH75T65UPD
manufacturer:
Fairchild Semiconductor
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
400 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
150 A
Pd - Power Dissipation:
187 W
Collector- Emitter Voltage VCEO Max:
650 V
Package / Case:
TO-247
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
2.3 V
Manufacturer:
Fairchild Semiconductor
Highlight:
Semiconductor IC FGH75T65UPD
,FGH75T65UPD power transistor
,FGH75T65UPD electronic component
Introduction
The FGH75T65UPD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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H11L1SR2VM |
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