FDC3601N
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manufacturer:
onsemi
Description:
MOSFET 2N-CH 100V 1A SSOT-6
Category:
Semiconductor IC
Specifications
Supplier Device Package:
SuperSOT™-6
Product Category:
MOSFET
Factory Stock:
0
Minimum Quantity:
3000
Input Capacitance (Ciss) (Max) @ Vds:
153pF @ 50V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Part Status:
Active
Current - Continuous Drain (Id) @ 25°C:
1A
Packaging:
Tape & Reel (TR)
@ Qty:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
FET Feature:
Standard
Drain To Source Voltage (Vdss):
100V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Rds On (Max) @ Id, Vgs:
500 MOhm @ 1A, 10V
Power - Max:
700mW
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
PowerTrench®
Manufacturer:
Onsemi
Introduction
The FDC3601N,from onsemi,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
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|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
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|
|
NCV0372BDWR2G |
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|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
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|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
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|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
|
|
|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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