STGB30H60DFB
manufacturer:
STMicroelectronics
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
+ / - 250 NA
Product Category:
IGBT Transistors
Mounting Style:
SMD/SMT
Continuous Collector Current At 25 C:
60 A
Pd - Power Dissipation:
260 W
Collector- Emitter Voltage VCEO Max:
600 V
Package / Case:
D2PAK-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Reel
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.55 V
Manufacturer:
STMicroelectronics
Highlight:
STGB30H60DFB IGBT semiconductor
,STGB30H60DFB power IC
,STGB30H60DFB high voltage IC
Introduction
The STGB30H60DFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
STM8AF5289TCX |
8-bit Microcontrollers - MCU 8-Bit Automotive MCU CAN Line 64kb Flash
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|
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|
STM8S207M8T6B |
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TS882IQ2T |
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|
LM2903PT |
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TS331ILT |
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