STGWA40H65DFB
manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
+/- 250 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
80 A
Pd - Power Dissipation:
283 W
Collector- Emitter Voltage VCEO Max:
650 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
+/- 20 V
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.6 V
Manufacturer:
STMicroelectronics
Highlight:
STGWA40H65DFB IGBT semiconductor
,STGWA40H65DFB power IC
,STGWA40H65DFB high voltage IC
Introduction
The STGWA40H65DFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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