STGW39NC60VD
manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-CHANNEL MFT
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
+/- 100 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Pd - Power Dissipation:
250 W
Collector- Emitter Voltage VCEO Max:
600 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.8 V/1.7 V
Manufacturer:
STMicroelectronics
Highlight:
STGW39NC60VD power semiconductor IC
,STGW39NC60VD high voltage IC
,STGW39NC60VD industrial IC
Introduction
The STGW39NC60VD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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|---|---|---|---|
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