STGWA60H65DFB
manufacturer:
STMicroelectronics
Description:
IGBT Transistors IGBT & Power Bipolar
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
250 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
80 A
Pd - Power Dissipation:
375 W
Collector- Emitter Voltage VCEO Max:
650 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
+/- 20 V
Configuration:
Single
Collector-Emitter Saturation Voltage:
2 V
Manufacturer:
STMicroelectronics
Highlight:
STGWA60H65DFB semiconductor IC
,STGWA60H65DFB power module
,STGWA60H65DFB IGBT transistor
Introduction
The STGWA60H65DFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
STM8AF5289TCX |
8-bit Microcontrollers - MCU 8-Bit Automotive MCU CAN Line 64kb Flash
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|
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|
STM8S207M8T6B |
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TS882IQ2T |
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TS331ILT |
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