SIA456DJ-T1-GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 2.6A PPAK SC70
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs:
14.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.38Ohm @ 750mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
350 PF @ 100 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SC-70-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Power Dissipation (Max):
3.5W (Ta), 19W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIA456
Introduction
N-Channel 200 V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
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|
|
IRFP448PBF |
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|
IRFBE30SPBF |
MOSFET N-CH 800V 4.1A D2PAK
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IRF644STRRPBF |
MOSFET N-CH 250V 14A D2PAK
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|
SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
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|
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|
SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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SQM120P06-07L_GE3 |
MOSFET P-CH 60V 120A TO263
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|
SQM100P10-19L_GE3 |
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|
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|
SQJA36EP-T1_GE3 |
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|
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|
SQJ459EP-T1_GE3 |
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|
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