SI2337DS-T1-E3
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manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 80V 2.2A SOT23-3
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
17 NC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 1.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
500 PF @ 40 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.2A (Tc)
Power Dissipation (Max):
760mW (Ta), 2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2337
Introduction
P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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SQJ486EP-T1_GE3 |
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SQJ459EP-T1_GE3 |
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