NVD5117PLT4G-VF01
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manufacturer:
onsemi
Description:
MOSFET P-CH 60V 11A/61A DPAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
85 NC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 29A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4800 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 61A (Tc)
Power Dissipation (Max):
4.1W (Ta), 118W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVD5117
Introduction
P-Channel 60 V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
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