FDMS86163P
manufacturer:
onsemi
Description:
MOSFET P-CH 100V 7.9A/50A 8PQFN
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
59 NC @ 10 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 7.9A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4085 PF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
7.9A (Ta), 50A (Tc)
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86163
Highlight:
FDMS86163P power MOSFET
,FDMS86163P semiconductor IC
,FDMS86163P with warranty
Introduction
P-Channel 100 V 7.9A (Ta), 50A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
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|
|
LM2904DMR2G |
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|
|
|
|
NCV0372BDWR2G |
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|
|
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|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
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|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
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|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
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|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
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FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
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|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
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|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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