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Home > products > Semiconductor IC > SQJ182EP-T1_GE3

SQJ182EP-T1_GE3

manufacturer:
Vishay Siliconix
Description:
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
96 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
5392 PF @ 25 V
Series:
Automotive, AEC-Q101, TrenchFET® Gen IV
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Supplier Device Package:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
5mOhm @ 15A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
395W (Tc)
Package / Case:
PowerPAK® SO-8
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
210A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 80 V 210A (Tc) 395W (Tc) Surface Mount PowerPAK® SO-8
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