NVH4L080N120SC1
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manufacturer:
onsemi
Description:
SICFET N-CH 1200V 29A TO247-4
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 20 V
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1670 PF @ 800 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247-4L
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Power Dissipation (Max):
170mW (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NVH4L080
Introduction
N-Channel 1200 V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L
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