SQ2318AES-T1_GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 40V 8A SOT23-3
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Rds On (Max) @ Id, Vgs:
31mOhm @ 7.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
555 PF @ 10 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2318
Introduction
N-Channel 40 V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
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|
|
IRFP448PBF |
MOSFET N-CH 500V 11A TO247-3
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|
IRFBE30SPBF |
MOSFET N-CH 800V 4.1A D2PAK
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IRF644STRRPBF |
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SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
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SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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SQM120P06-07L_GE3 |
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SQM100P10-19L_GE3 |
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SQJA36EP-T1_GE3 |
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|
SQJ459EP-T1_GE3 |
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|
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