IRFP250PBF
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 30A TO247-3
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 10 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2800 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247AC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
190W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFP250
Introduction
N-Channel 200 V 30A (Tc) 190W (Tc) Through Hole TO-247AC
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| Image | Part # | Description | |
|---|---|---|---|
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SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
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|
|
IRFP448PBF |
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|
IRFBE30SPBF |
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IRF644STRRPBF |
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SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
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|
SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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|
SQM120P06-07L_GE3 |
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|
SQM100P10-19L_GE3 |
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|
|
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|
SQJA36EP-T1_GE3 |
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|
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|
SQJ459EP-T1_GE3 |
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|
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