SQ4401EY-T1_GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 40V 17.3A 8SO
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
115 NC @ 10 V
Rds On (Max) @ Id, Vgs:
14mOhm @ 10.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds:
4250 PF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
17.3A (Tc)
Power Dissipation (Max):
7.14W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ4401
Introduction
P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
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|
|
|
IRFP448PBF |
MOSFET N-CH 500V 11A TO247-3
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|
IRFBE30SPBF |
MOSFET N-CH 800V 4.1A D2PAK
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IRF644STRRPBF |
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SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
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|
SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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SQM120P06-07L_GE3 |
MOSFET P-CH 60V 120A TO263
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|
SQM100P10-19L_GE3 |
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|
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|
SQJA36EP-T1_GE3 |
MOSFET N-CH 40V 350A PPAK SO-8
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|
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|
SQJ459EP-T1_GE3 |
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|
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