SISS42LDN-T1-GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 11.3A/39A PPAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 10 V
Rds On (Max) @ Id, Vgs:
14.9mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2058 PF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
11.3A (Ta), 39A (Tc)
Power Dissipation (Max):
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS42
Introduction
N-Channel 100 V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
|
|
|
|
IRFP448PBF |
MOSFET N-CH 500V 11A TO247-3
|
|
|
|
IRFBE30SPBF |
MOSFET N-CH 800V 4.1A D2PAK
|
|
|
|
IRF644STRRPBF |
MOSFET N-CH 250V 14A D2PAK
|
|
|
|
SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
|
|
|
|
SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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|
|
|
SQM120P06-07L_GE3 |
MOSFET P-CH 60V 120A TO263
|
|
|
|
SQM100P10-19L_GE3 |
MOSFET P-CH 100V 93A TO263
|
|
|
|
SQJA36EP-T1_GE3 |
MOSFET N-CH 40V 350A PPAK SO-8
|
|
|
|
SQJ459EP-T1_GE3 |
MOSFET P-CH 60V 52A PPAK SO-8
|
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