IRFZ14PBF
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 10A TO220AB
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
11 NC @ 10 V
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
300 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
43W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFZ14
Introduction
N-Channel 60 V 10A (Tc) 43W (Tc) Through Hole TO-220AB
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