NTH4L045N065SC1
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manufacturer:
onsemi
Description:
SILICON CARBIDE MOSFET, NCHANNEL
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
105 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1870 PF @ 325 V
Series:
-
Vgs (Max):
+22V, -8V
Vgs(th) (Max) @ Id:
4.3V @ 8mA
Supplier Device Package:
TO-247-4L
Rds On (Max) @ Id, Vgs:
50mOhm @ 25A, 18V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Power Dissipation (Max):
187W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Introduction
N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L
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