NTBG080N120SC1
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manufacturer:
onsemi
Description:
SICFET N-CH 1200V 30A D2PAK-7
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 20 V
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+25, -15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1154 PF @ 800 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
179W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG080
Introduction
N-Channel 1200 V 30A (Tc) 179W (Tc) Surface Mount D2PAK-7
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