SI2333DS-T1-GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 12V 4.1A SOT23-3
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
32mOhm @ 5.3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1100 PF @ 6 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.1A (Ta)
Power Dissipation (Max):
750mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2333
Introduction
P-Channel 12 V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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SQJ459EP-T1_GE3 |
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