HUF75639P3
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manufacturer:
onsemi
Description:
MOSFET N-CH 100V 56A TO220-3
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 20 V
Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2000 PF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75639
Introduction
N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-220-3
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