SI4056ADY-T1-GE3
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manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 5.9A/8.3A 8SOIC
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
TrenchFET®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Supplier Device Package:
8-SOIC
Rds On (Max) @ Id, Vgs:
29.2mOhm @ 5.9A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1330 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
2.5W (Ta), 5W (Tc)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C:
5.9A (Ta), 8.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4056
Introduction
N-Channel 100 V 5.9A (Ta), 8.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQJ409EP-T1_GE3 |
MOSFET P-CH 40V 60A PPAK SO-8
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|
IRFP448PBF |
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|
IRFBE30SPBF |
MOSFET N-CH 800V 4.1A D2PAK
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IRF644STRRPBF |
MOSFET N-CH 250V 14A D2PAK
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|
SQJ486EP-T1_GE3 |
MOSFET N-CH 75V 30A PPAK SO-8
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|
|
|
SIHB24N80AE-GE3 |
MOSFET N-CH 800V 21A D2PAK
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|
SQM120P06-07L_GE3 |
MOSFET P-CH 60V 120A TO263
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|
SQM100P10-19L_GE3 |
MOSFET P-CH 100V 93A TO263
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|
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|
SQJA36EP-T1_GE3 |
MOSFET N-CH 40V 350A PPAK SO-8
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|
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|
SQJ459EP-T1_GE3 |
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|
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