logo
Send Message
Home > products > Semiconductor IC > SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 150V 24.5A PPAK SO-8
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Rds On (Max) @ Id, Vgs:
35.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1045 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
24.5A (Tc)
Power Dissipation (Max):
55W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ872
Introduction
N-Channel 150 V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
Send RFQ
Stock:
MOQ: