FDB12N50TM
manufacturer:
onsemi
Description:
MOSFET N-CH 500V 11.5A D2PAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
30 NC @ 10 V
Rds On (Max) @ Id, Vgs:
650mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1315 PF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Power Dissipation (Max):
165W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB12N50
Highlight:
FDB12N50TM power MOSFET
,FDB12N50TM semiconductor IC
,FDB12N50TM N-channel transistor
Introduction
N-Channel 500 V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)
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