NVH4L022N120M3S
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manufacturer:
onsemi
Description:
SIC MOS TO247-4L 22MOHM 1200V
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
151 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
3175 PF @ 800 V
Series:
Automotive, AEC-Q101
Vgs (Max):
+22V, -10V
Vgs(th) (Max) @ Id:
4.4V @ 20mA
Supplier Device Package:
TO-247-4L
Rds On (Max) @ Id, Vgs:
30mOhm @ 40A, 18V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
352W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
68A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Introduction
N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
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| Image | Part # | Description | |
|---|---|---|---|
|
|
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|
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LM2904DMR2G |
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|
NCV2903DMR2G |
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|
CAT24C08WI-GT3 |
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|
FDC3601N |
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|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
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|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
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FDC6401N |
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|
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