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Home > products > Semiconductor IC > FDB86363-F085

FDB86363-F085

manufacturer:
onsemi
Description:
MOSFET N-CH 80V 110A D2PAK
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
150 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds:
10000 PF @ 40 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB86363
Introduction
N-Channel 80 V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
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