MBR10100G
manufacturer:
onsemi
Description:
DIODE SCHOTTKY 100V 10A TO220-2
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
800 MV @ 10 A
Package:
Tube
Series:
SWITCHMODE™
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220-2
Mfr:
Onsemi
Technology:
Schottky
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
10A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
MBR1010
Highlight:
MBR10100G rectifier diode
,Semiconductor IC MBR10100G
,MBR10100G power diode
Introduction
Diode 100 V 10A Through Hole TO-220-2
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
|
|
|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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