NSV60600MZ4T1G
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manufacturer:
onsemi
Category:
Semiconductor IC
Specifications
Transistor Polarity:
PNP
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
- 12 A
Collector- Emitter Voltage VCEO Max:
- 60 V
Package / Case:
SOT-223-4
Maximum Operating Temperature:
+ 150 C
Gain Bandwidth Product FT:
100 MHz
Configuration:
Single
Collector- Base Voltage VCBO:
- 100 V
Series:
NSS60600
Emitter- Base Voltage VEBO:
- 6 V
Collector-Emitter Saturation Voltage:
- 0.1 V
Manufacturer:
Onsemi
Introduction
The NSV60600MZ4T1G,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
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|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
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|
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