logo
Send Message
Home > products > Semiconductor IC > 2SC3647S-TD-E

2SC3647S-TD-E

manufacturer:
onsemi
Description:
Bipolar Transistors - BJT BIP NPN 2A 100V
Category:
Semiconductor IC
Specifications
Transistor Polarity:
NPN
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
3 A
Collector- Emitter Voltage VCEO Max:
100 V
Package / Case:
PCP-3
Maximum Operating Temperature:
+ 150 C
Gain Bandwidth Product FT:
120 MHz
Configuration:
Single
Collector- Base Voltage VCBO:
120 V
Series:
2SC3647
Emitter- Base Voltage VEBO:
6 V
Collector-Emitter Saturation Voltage:
0.13 V
Manufacturer:
Onsemi
Introduction
The 2SC3647S-TD-E,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: