IPD90N10S4L-06
manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET
Category:
Semiconductor IC
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
90 A
Mounting Style:
SMD/SMT
Minimum Operating Temperature:
- 55 C
Package / Case:
TO-252-3
Maximum Operating Temperature:
+ 175 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
100 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
1.1 V
Product Category:
MOSFET
Rds On - Drain-Source Resistance:
5.8 MOhms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
98 NC
Manufacturer:
Infineon Technologies
Highlight:
Semiconductor IC IPD90N10S4L-06
,MOSFET transistor IPD90N10S4L-06
,Power management IC IPD90N10S4L-06
Introduction
The IPD90N10S4L-06,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
IPD25N06S4L-30 |
MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2
|
|
|
|
IPD15N06S2L-64 |
MOSFET N-Ch 55V 19A DPAK-2 OptiMOS
|
|
|
|
IPD50N08S4-13 |
MOSFET N-CHANNEL 75/80V
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|
|
IPD35N10S3L-26 |
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
|
|
|
|
FZ600R12KE4HOSA1 |
MOD IGBT MED PWR 62MM-2
|
|
|
|
S26HS01GTGABHB030 |
IC FLASH 1GBIT HYPERBUS 24FBGA
|
|
|
|
FM24V02A-GTR |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
|
|
|
|
FM24C16B-GTR |
IC FRAM 16KBIT I2C 1MHZ 8SOIC
|
|
|
|
S25FL127SABMFV101 |
IC FLASH 128MBIT SPI/QUAD 8SOIC
|
|
|
|
TLE8366E V50 |
Switching Voltage Regulators 1.8A DC/DC Step-Down Voltage Regulator
|
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