IPD25N06S4L-30
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manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2
Category:
Semiconductor IC
Specifications
Product Category:
MOSFET
Id - Continuous Drain Current:
25 A
Pd - Power Dissipation:
29 W
Vds - Drain-Source Breakdown Voltage:
60 V
Packaging:
Tape & Reel (TR)
Vgs Th - Gate-Source Threshold Voltage:
1.2 V
Package:
TO-252
Rds On - Drain-Source Resistance:
23 MOhms
RoHS:
Green Available
Factory Pack Quantity:
2500
Vgs - Gate-Source Voltage:
- 16 V, + 16 V
Qg - Gate Charge:
16.3 NC
Manufacturer:
Infineon Technologies
Introduction
The IPD25N06S4L-30,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
IPD15N06S2L-64 |
MOSFET N-Ch 55V 19A DPAK-2 OptiMOS
|
|
|
|
IPD50N08S4-13 |
MOSFET N-CHANNEL 75/80V
|
|
|
|
IPD90N10S4L-06 |
MOSFET MOSFET
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|
IPD35N10S3L-26 |
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
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|
|
|
FZ600R12KE4HOSA1 |
MOD IGBT MED PWR 62MM-2
|
|
|
|
S26HS01GTGABHB030 |
IC FLASH 1GBIT HYPERBUS 24FBGA
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|
|
|
FM24V02A-GTR |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
|
|
|
|
FM24C16B-GTR |
IC FRAM 16KBIT I2C 1MHZ 8SOIC
|
|
|
|
S25FL127SABMFV101 |
IC FLASH 128MBIT SPI/QUAD 8SOIC
|
|
|
|
TLE8366E V50 |
Switching Voltage Regulators 1.8A DC/DC Step-Down Voltage Regulator
|
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