NVD2955T4G
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manufacturer:
onsemi
Description:
MOSFET PFET DPAK 60V 12A 180MO
Category:
Semiconductor IC
Specifications
Transistor Polarity:
P-Channel
Technology:
Si
Product Category:
MOSFET
Mounting Style:
SMD/SMT
Minimum Operating Temperature:
- 55 C
Package / Case:
TO-252-3
Maximum Operating Temperature:
+ 175 C
Vds - Drain-Source Breakdown Voltage:
- 60 V
Packaging:
Reel
Id - Continuous Drain Current:
- 12 A
Rds On - Drain-Source Resistance:
155 MOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
15 NC
Manufacturer:
Onsemi
Introduction
The NVD2955T4G,from onsemi,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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