NTJD4152PT1G
Specifications
Supplier Device Package:
SC-88/SC70-6/SOT-363
Product Category:
MOSFET
Factory Stock:
0
Minimum Quantity:
3000
Input Capacitance (Ciss) (Max) @ Vds:
155pF @ 20V
Package / Case:
6-TSSOP, SC-88, SOT-363
Part Status:
Active
Current - Continuous Drain (Id) @ 25°C:
880mA
Packaging:
Tape & Reel (TR)
@ Qty:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain To Source Voltage (Vdss):
20V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
260 MOhm @ 880mA, 4.5V
Power - Max:
272mW
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Series:
-
Manufacturer:
Onsemi
Highlight:
NTJD4152PT1G semiconductor IC
,NTJD4152PT1G transistor IC
,NTJD4152PT1G power management IC
Introduction
The NTJD4152PT1G,from onsemi,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
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|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
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|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
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|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
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|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
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|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
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|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
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FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
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|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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