FQP13N50C
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manufacturer:
onsemi
Description:
MOSFET 500V N-Ch Q-FET advance C-Series
Category:
Semiconductor IC
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
13 A
Mounting Style:
Through Hole
Minimum Operating Temperature:
- 55 C
Package / Case:
TO-220-3
Maximum Operating Temperature:
+ 150 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
500 V
Packaging:
Tube
Product Category:
MOSFET
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
30 V
Rds On - Drain-Source Resistance:
480 MOhms
Manufacturer:
Onsemi
Introduction
The FQP13N50C,from onsemi,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
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|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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