MUN5235DW1T1G
Specifications
Transistor Polarity:
NPN
Product Category:
Bipolar Transistors - Pre-Biased
Mounting Style:
SMD/SMT
Typical Resistor Ratio:
0.047
Pd - Power Dissipation:
187 MW
Collector- Emitter Voltage VCEO Max:
50 V
Package / Case:
SOT-363-6
Maximum Operating Temperature:
+ 150 C
DC Collector/Base Gain Hfe Min:
80 At 5 MA At 10 V
Packaging:
Reel
Configuration:
Dual
Series:
MUN5235DW1
Typical Input Resistor:
2.2 KOhms
Peak DC Collector Current:
100 MA
Manufacturer:
Onsemi
Continuous Collector Current:
0.1 A
Highlight:
Semiconductor IC MUN5235DW1T1G
,MUN5235DW1T1G transistor
,IC component MUN5235DW1T1G
Introduction
The MUN5235DW1T1G,from onsemi,is Bipolar Transistors - Pre-Biased.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
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|
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|
|
NCV0372BDWR2G |
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|
NCV2903DMR2G |
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|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
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|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
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|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
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|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
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|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
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|
FDS4559 |
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|
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