NGTB25N120FL3WG
manufacturer:
onsemi
Description:
IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
Category:
Semiconductor IC
Specifications
Gate-Emitter Leakage Current:
200 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
100 A
Pd - Power Dissipation:
349 W
Collector- Emitter Voltage VCEO Max:
1.2 KV
Package / Case:
TO247-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.7 V
Manufacturer:
Onsemi
Highlight:
Semiconductor IC NGTB25N120FL3WG
,Power transistor NGTB25N120FL3WG
,High voltage IC NGTB25N120FL3WG
Introduction
The NGTB25N120FL3WG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
|
|
|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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