NJD35N04T4G
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manufacturer:
onsemi
Category:
Semiconductor IC
Specifications
Transistor Polarity:
NPN
Product Category:
Darlington Transistors
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
4 A
Pd - Power Dissipation:
45 W
Collector- Emitter Voltage VCEO Max:
350 V
Package / Case:
TO-252-3 (D-PAK)
Maximum Operating Temperature:
+ 150 C
Packaging:
Reel
Configuration:
Single
Collector- Base Voltage VCBO:
700 V
Series:
NJD35N04
Emitter- Base Voltage VEBO:
5 V
Manufacturer:
Onsemi
Introduction
The NJD35N04T4G,from onsemi,is Darlington Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
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|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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