NJVMJD32CT4G
manufacturer:
onsemi
Description:
Darlington Transistors BIP DPAK PNP 3A 100V TR
Category:
Semiconductor IC
Specifications
Transistor Polarity:
PNP
Product Category:
Darlington Transistors
Mounting Style:
SMD/SMT
Pd - Power Dissipation:
15 W
Collector- Emitter Voltage VCEO Max:
100 V
Package / Case:
DPAK
Maximum Operating Temperature:
+ 150 C
Packaging:
Reel
Configuration:
Single
Collector- Base Voltage VCBO:
100 V
Series:
MJD32C
Maximum Collector Cut-off Current:
50 UA
Emitter- Base Voltage VEBO:
5 V
Manufacturer:
Onsemi
Highlight:
Semiconductor IC NJVMJD32CT4G
,Power MOSFET NJVMJD32CT4G
,High voltage IC NJVMJD32CT4G
Introduction
The NJVMJD32CT4G,from onsemi,is Darlington Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
|
|
|
FDS4559 |
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
|
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