MMBFJ309LT1G
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manufacturer:
onsemi
Description:
JFET 25V 10mA
Category:
Semiconductor IC
Specifications
Transistor Polarity:
N-Channel
Vgs - Gate-Source Breakdown Voltage:
25 V
Product Category:
JFET
Mounting Style:
SMD/SMT
Drain-Source Current At Vgs=0:
12 MA To 30 MA
Package / Case:
SOT-23-3
Vds - Drain-Source Breakdown Voltage:
25 V
Packaging:
Reel
Configuration:
Single
Series:
MMBFJ309L
Manufacturer:
Onsemi
Introduction
The MMBFJ309LT1G,from onsemi,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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