NSVMUN5312DW1T2G
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manufacturer:
onsemi
Category:
Semiconductor IC
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
-
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SC-88/SC70-6/SOT-363
Resistor - Base (R1):
22kOhms
Mfr:
Onsemi
Resistor - Emitter Base (R2):
22kOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
250mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 10V
Base Product Number:
NSVMUN5312
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
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