FDC6312P
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manufacturer:
onsemi
Description:
MOSFET 2P-CH 20V 2.3A SSOT-6
Category:
Semiconductor IC
Specifications
Supplier Device Package:
SuperSOT™-6
Product Category:
MOSFET
Factory Stock:
0
Minimum Quantity:
3000
Input Capacitance (Ciss) (Max) @ Vds:
467pF @ 10V
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Part Status:
Active
Current - Continuous Drain (Id) @ 25°C:
2.3A
Packaging:
Tape & Reel (TR)
@ Qty:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain To Source Voltage (Vdss):
20V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
115 MOhm @ 2.3A, 4.5V
Power - Max:
700mW
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Manufacturer:
Onsemi
Introduction
The FDC6312P,from onsemi,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET Semiconductor IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
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|
|
|
|
LM2904DMR2G |
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|
|
|
NCV0372BDWR2G |
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|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
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|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
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|
FDC6401N |
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|
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